PART |
Description |
Maker |
12N60G-T2Q-T 12N60L-T2Q-T 12N60G-TA3-T 12N60G-TF1- |
12A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
1N6767 1N6767R JANTXV1N6767R 1N6766 1N6766R JANTX1 |
12A center-tap ultra-fast rectifier 400V, 12A, Center-Tap Ultra-Fast Power Rectifier(400V , 12A,中心抽头,超快恢复电源整流器) 600V, 12A, Center-Tap Ultra-Fast Power Rectifier(600V , 12A,中心抽头,超快恢复电源整流器) 400V Thru 600V 12A Center-Tap Ultra-Fast Power Rectifier in TO-254 Hermetic Package 400V Thru 600V, 12A, Center-Tap Ultra-Fast Power Rectifier in TO-254 Hermetic Package From old datasheet system
|
Electronic Theatre Controls, Inc. Omnirel ETC[ETC] List of Unclassifed Manufacturers
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IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET,第12A50-200 V (MTP12N18 / MTP12N20) N-Channel Power MOSFETs N-Channel Power MOSFETs/ 12A/ 150-200 V N-Channel Power MOSFETs 12A 150-200 V
|
http:// Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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AOTF12N60FD |
600V, 12A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
2SK3012 |
VX-2 Series Power MOSFET(600V 12A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
RJK60S3DPP-E0 RJK60S3DPP-E0-T2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N6 |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
|
Fairchild Semiconductor
|
IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
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SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRG4BC30UD IRG4BC30UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
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